 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IPD400N06N G OptiMOS(R) Power-Transistor Features * For fast switching converters and sync. rectification * N-channel enhancement - normal level * 175 C operating temperature * Avalanche rated * Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 40 27 V m A Type IPD400N06N G Package Type IPD400N06N G Marking PG-TO252-3 Package 400N06N PG-TO252-3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 27 19 108 80 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C1) I D=27 A, R GS=25 I D=27 A, V DS=20 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 68 -55 ... 175 55/175/56 See figure 3 Rev. 1.3 page 1 2008-09-01 IPD400N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=28 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=27 A V GS=20 V, V DS=0 V V GS=10 V, I D=27 A 60 2 3 0.01 4 1 A V 2.2 75 50 K/W Values typ. max. Unit 12 1 10 31 1.5 24 100 100 40 nA m S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) Rev. 1.3 page 2 2008-09-01 IPD400N06N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 3) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=27 A, R G=22 V GS=0 V, V DS=30 V, f =1 MHz - 490 130 36 9 24 24 23 650 170 54 13 36 36 35 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=27 A, V GS=0 to 10 V - 2.9 1.5 5.7 7.1 13 6.0 4.9 3.9 1.9 8.5 10 17 6 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=27 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s - 0.96 31 40 30 108 1.3 40 50 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.3 page 3 2008-09-01 IPD400N06N G 1 Power dissipation P tot=f(T C); V GS6 V 2 Drain current I D=f(T C); V GS10 V 80 30 70 60 20 50 P tot [W] 40 30 10 20 10 0 0 50 100 150 200 I D [A] 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 1 s 102 limited by on-state resistance 100 s 10 s 100 0.5 Z thJC [K/W] 0.2 0.1 0.05 0.02 single pulse I D [A] 101 DC 1 ms 10 ms 10-1 100 0.01 10-1 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.3 page 4 2008-09-01 IPD400N06N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 60 20 V 10 V 5V 5.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 120 50 7V 100 6V 40 6.5 V 80 R DS(on) [m] I D [A] 30 6V 60 6.5 V 20 5.5 V 40 7V 10 V 20 V 10 5V 4.5 V 20 0 0 1 2 0 4 5 0 10 20 30 40 3 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 30 8 Typ. forward transconductance g fs=f(I D); T j=25 C 30 25 20 20 g fs [S] 10 175 C 25 C I D [A] 15 10 5 0 0 2 4 6 8 0 0 5 10 15 20 25 30 V GS [V] I D [A] Rev. 1.3 page 5 2008-09-01 IPD400N06N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=27 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 100 5 80 4 R DS(on) [m] 60 V GS(th) [V] 3 28 A 280 A 98 % 40 typ 2 20 1 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 102 103 Ciss 175 C 25 C 175C 98% C [pF] I F [A] 101 25C 98% Coss 102 Crss 100 101 0 10 20 V DS [V] 30 40 50 10-1 0 0.5 1 1.5 2 V SD [V] Rev. 1.3 page 6 2008-09-01 IPD400N06N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=27 A pulsed parameter: V DD 12 30 V 10 12V 48 V 25 C 100 C 8 10 V GS [V] 100 1000 I AV [A] 150 C 6 4 2 1 1 10 0 0 5 10 15 20 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS Qg 70 V BR(DSS) [V] 65 60 V g s(th) 55 Q g(th) Q sw Q gs Q g ate 50 -60 -20 20 60 100 140 180 Q gd T j [C] Rev. 1.3 page 7 2008-09-01 IPD400N06N G PG-TO252-3: Outline Rev. 1.3 page 8 2008-09-01 IPD400N06N G Rev. 1.3 page 9 2008-09-01 |
Price & Availability of IPD400N06NG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |